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1.6TDR16TRx-PIC-1.6TDR16TRx-PIC

1.6T DR16 TRx-PIC

 1.6T DR16 TRx-PIC total loss1 ≤ 14.5dB, with working wavelength range 1311±6.5nm.

 Si MZM 3dB EO bandwidth ≥ 35GHz, and modulation efficiency Vpi ≤ 6.0V @ PN junction bias voltage = 2V, for 53GBaud PAM4 application.

 Si MZM 3dB EO bandwidth ≥ 55GHz, and modulation efficiency Vpi ≤ 7.0V @ PN junction bias voltage = 3V, for 106GBaud PAM4 application.

​​​​​​​ Ge high-speed photodiode OE bandwidth ≥ 35GHz, and dark current ≤ 50nA @-1V, for 53GBaud PAM4 application.

​​​​​​​ Ge high-speed photodiode OE bandwidth ≥ 60GHz, and dark current ≤ 50nA @-1V, for 106GBaud PAM4 application.

​​​​​​​ Rx-part effective responsivity ≥ 0.6A/W, receiver PDL ≤ 0.5dB.

​​​​​​​ ​​​​​​​Si thermo-optic phase shifter with power efficiency Ppi ≤ 10mW, heater resistance R = 120ohm.

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Email:cspcdatacom@cspctech.com